台懋半导体叙述MOSFET

台懋TMC-MOS 2025-06-13 152503

For domestic MOS, choose TMC-1 -- Taimei Semiconductor explains MOSFET

MOS tube parameters you must know:

MOSFET: Metal-Oxide-Semiconductor Field-Effect Transistor, commonly known as MOS tube. It is a type of field-effect transistor (FET) and plays a very important role in the power field, which can be said to be a very important discrete device.

MOSFET and Bipolar Junction Transistor (BJT) form the two core device families in modern electronic circuits. MOSFET is a voltage-controlled fully controlled device. It regulates the current between the source and drain by controlling the gate voltage (Vgs) without directly controlling the current itself. This feature enables MOSFET to show excellent performance in many terminal applications.

➡ Rated voltage:

VDSS:The maximum voltage that can be applied between the drain (D) and the source (S).

VGSS:The maximum voltage that can be applied between the gate (G) and the source (S).

➡ Rated current:

ID(DC)：The maximum DC current allowed to pass through the drain. This value is restricted by on-resistance, packaging, internal wiring, etc., under the condition of TC=25℃ (assuming the package is closely attached to an infinite heat sink).

ID（Pulse）：The maximum pulse current allowed to pass through the drain. This value is also restricted by pulse width and duty cycle, etc.

➡ Rated power consumption:

PT：The maximum power consumption that the chip can withstand.
Under the condition of TC=25℃ -- closely connected to an infinite heat sink, the temperature of the back of the package is 25℃.

TA=25Under the condition of TA=25℃ -- installed upright without a heat sink, and the ambient temperature is 25℃.

➡ Rated temperature:

Tch：The upper limit temperature of the MOSFET's channel.

Tstg：The MOSFET device itself or products using MOSFET.

➡ Avalanche resistance guarantee:

An indicator of the overvoltage withstand capacity of MOSFET in the off state. If the voltage exceeds the drain-source limit voltage, the device will be in avalanche.

For example: When switching inductive loads such as motors and coils, induced electromotive force will be generated at the moment of turn-off.

EAS: Single pulse avalanche breakdown energy. This is a limit parameter, indicating the maximum avalanche breakdown energy that the MOSFET can withstand.

IAR: Avalanche current.

EAR: Repetitive avalanche breakdown energy.

➡ Thermal resistance:

It indicates the difficulty of heat conduction. The smaller the thermal resistance value, the better the heat dissipation performance. If the thermal resistance value is not specified in the manual, it can be calculated according to the rated power consumption PT and Tch.

➡ Leakage current:

IDSS： Leakage current between the drain and the source. When VGS=0, VDSS is applied between D and S. It is generally at the microampere level.

IGSS：Leakage current between the gate and the source. When VDS=0, VGSS is applied between G and S. Due to the large input impedance of MOSFET, IGSS is generally at the nanoampere level.

➡ Gate threshold voltage VGS（off）or VGS（th）:

The gate voltage VGS when the MOSFET's VDS=10V and ID=250uA.

On-resistance between drain/source RDs（on）:

The resistance of MOSFET in the on state. The larger the on-resistance, the greater the loss in the on state. Therefore, we should try to reduce the on-resistance of MOSFET.

Power consumption is proportional to the square of the current. For products with larger currents, lower on-resistance is more needed.

➡ Switching time:

Td（on）: Turn-on delay time, which is the time between the gate-source voltage Vgs rising to 10% and the drain-source voltage Vds dropping to 90%.

Tr: Turn-on rise time, which is the time for the drain-source voltage Vds to drop from 90% to 10%.

Td（off）: Turn-off delay time, which is the time between the gate-source voltage Vgs dropping to 90% and the drain-source voltage Vds rising to 10%.

Tf: Turn-off fall time, which is the time for the drain-source voltage Vds to rise from 10% to 90%.

The above key parameters of MOSFET are what engineers need to pay attention to when selecting models according to actual projects.
Then let's look at the next part: specific application circuits of MOS tubes.

Next part: For domestic MOS, choose TMC-2 -- Application of DC brushless motor controller

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